| PART |
Description |
Maker |
| PDTC114E PDTC114EE PDTC114EEF PDTC114EK PDTC114EM |
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm NPN配电阻型晶体R1=10千欧姆，R2=10千欧
NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ
NPN resistor-equipped transistor; R1 = 10 k楼?, R2 = 10 k楼?
|
NXP Semiconductors N.V.
|
| PDTD113ZT PDTD113ZT215 PDTD113ZT-13 PDTD113ZT-15 |
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
NPN 500 mA, 50 V resistor-equipped transistor R1 = 1 kW, R2 = 10 kW
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
| PEMH13 PUMH13 |
NPN/NPN resistor-equipped transistors; R1 = 4.7 k惟, R2 = 47 k惟
NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
NPN-NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 47 kOhm NPN-NPN配电阻型晶体管，R1=4.7千欧姆，R2=47千欧
|
NXP Semiconductors N.V.
|
| PDTC114YEF PDTC114YT |
NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 47 kOhm NPN配电阻型晶体R1=10千欧姆，R2=47千欧
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
NPN resistor-equipped transistors; R1 = 10 k楼?, R2 = 47 k楼?
|
NXP Semiconductors N.V.
|
| PEMD13 PUMD13 |
NPN-PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 47 kOhm NPN-PNP配电阻型晶体管，R1=4.7千欧姆，R2=47千欧
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
NPN/PNP resistor-equipped transistors; R1 = 4.7 k楼?, R2 = 47 k楼?
|
NXP Semiconductors N.V.
|
| PUMD17 PEMD17 PEMD17-PUMD17-15 |
NPN/PNP resistor-equipped transistors R1 = 47 kW, R2 = 22 kW
PEMD17; PUMD17; NPN/PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm
|
NXP Semiconductors
Philips Semiconductors
|
| PDTC114TU115 PDTC114TM PDTC114TS PDTC114TE PDTC114 |
NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = open
NPN resistor-equipped transistors; R1 = 10 kW, R2 = open
NPN resistor-equipped transistors; R1 = 10 kW, R2 = open
|
NXP Semiconductors N.V.
|
| PEMD6 PEMD6_2 |
From old datasheet system
NPN/PNP RESISTOR-EQUIPPED TRANSISTORS; R1 = 4.7 KOHM, R2 = OPEN
NPN/PNP resistor-equipped transistors; R1 = 4.7 kohm/ R2 = open
|
NXP Semiconductors
Philips Semiconductors
|
| PIMN31 |
500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
|
http://
|
| PEMH1 PUMH1 |
NPN/NPN resistor-equipped transistors; R1 = 22 kOMH, R2 = 22 kOHM
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PUMH30 PEMH30-06 PEMH30-PUMH30-15 |
NPN/NPN double resistor-equipped transistors R1 = 2.2 kW, R2 = open
|
NXP Semiconductors
|
| PDTC124ES |
NPN resistor-equipped transistor
|
Philips
|
